| PART |
Description |
Maker |
| BT138F BT138F-500 BT138F-500F BT138F-500G BT138F-6 |
DIODE ZENER TRIPLE ISOLATED 200mW 9.1Vz 20mA-Izt 0.02592 0.1uA-Ir 7 SOT-363 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 18Vz 0.05mA-Izt 0.05 0.05uA-Ir 13.6 SOT-363 3K/REEL
DIODE ZENER TRIPLE BI-DIRECTIONAL 200mW 24Vz 0.05mA-Izt 0.05 0.05uA-Ir 18.2 SOT-363 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 27Vz 0.05mA-Izt 0.05 0.05uA-Ir 20.4 SOT-363 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 22Vz 0.05mA-Izt 0.05 0.05uA-Ir 16.7 SOT-363 3K/REEL
Octal Bus Transceivers with 3-State Outputs 20-LCCC -55 to 125
Triacs
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| MMDT9014 |
SOT-363 Plastic-Encapsulate Transistors
|
TY Semiconductor Co., L...
|
| K4H560838E-GC/LA2 K4H560838E-GC/LB0 K4H560838E-GC/ |
DIODE ZENER TRIPLE ISOLATED 200mW 39.13Vz 5mA-Izt 0.02518 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 36.28Vz 5mA-Izt 0.02522 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 22.08Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 22.1Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 13.79Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 14Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 12.9Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 11.1Vz 10mA-Izt 0.02523 0.1uA-Ir 8.4 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 23.7Vz 5mA-Izt 0.02509 0.05uA-Ir 19 SOT-23 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 12.88Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-363 3K/REEL
256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
http://
|
| UMZ1N |
SOT-363 Plastic-Encapsulate Biploar Transistors
|
Micro Commercial Components
|
| MMBZ5245BS-7 MMBZ5239BS-7 MMBZ5237BS-7 MMBZ5234BS- |
DIODE ZENER 15V 200MW SOT-363 15 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
DIODE ZENER 9.1V 200MW SOT-363 9.1 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
DIODE ZENER 8.2V 200MW SOT-363 8.2 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
DIODE ZENER 6.2V 200MW SOT-363 6.2 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
DIODE ZENER 3.0V 200MW SOT-363 3 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
|
Diodes, Inc.
|
| NSS12200WT1G |
Low V-CE(sat) Transistor, PNP, 12 V, 2.0 A, SOT-363 Package
|
ON Semiconductor
|
| AG302-63-15 |
Lead-free/green/RoHS-compliant SOT-363 package
|
TriQuint Semiconductor
|
| DDAXXXXU DDA114EU DDA114TU DDA114YU DDA123JU DDA12 |
PNP PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR
|
DIODES[Diodes Incorporated]
|
| DDC122LU-7-F DDC122TU-7-F DDC142TU-7-F DDC142JU-7- |
NPN PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR
|
Diodes Inc.
|
| DDC122LU-7-F DDC142TU DDC142TU-7-F DDC142JU DDC142 |
NPN PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR
|
Diodes Incorporated
|
| DCX122LU-7-F DCX122TU-7-F DCX142TU-7-F DCX142JU-7- |
COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR
|
Diodes Inc.
|
